The unique electronic, mechanical and thermal properties of silicon carbide (SiC) make it ideally suited for electronic devices that need to operate at high temperature (above 400° C) and high power, well beyond the capability of both silicon and gallium arsenide. SiC has key advantages over current electronic component technologies, including higher power density, better heat dissipation, and increased bandwidth capability. SiC devices and substrates are currently used in light-emitting diodes, high power and high frequency devices, as well as in high radiation environments.
We offer both 6H and 4H SiC polytypes for semi-conducting and semi-insulating requirements:
- 3-Inch (76.2mm) DIAMETER, SEMI-INSULATING/
- 100mm DIAMETER, SEMI-INSULATING/
- 100mm DIAMETER, 4H POLYTYPE, n-type/
- 150mm DIAMETER, 4H POLYTYPE, n-Type/
- 150mm DIAMETER, 4H POLYTYPE, SEMI-INSULATING/
Quoted upon request. Contact Us for details.
Contact Us to discuss your custom specification requirements.
Purchase orders: Orders may be placed by e-mail, mail or fax.
Quotations: All quotations written or oral are valid for 60 days from the date of quotation.
Specifications: When placing orders or requests for quotations, please supply substrate specifications including diameter, thickness, orientation, flats, resistivity, dopant and concentration.
Warranty: WBG guarantees that all semiconductor material meets specifications provided. The buyer should notify WBG of any defects or nonconformance within 90 days after receipt of material.
Prices: The price and delivery on standard and custom requirements are available through WBG’s Sales Representatives.
Shipping: Federal Express, UPS, (Regular and Blue label), and air freight carriers are available. Fed Ex priority will be used unless otherwise instructed by buyer.
Terms: Payment terms are Net 30 days, FOB Pine Brook, NJ 07058.